2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC580
3
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current (DC)
12
A
I
CP
Collector Current (Pulse)
24
A
P
C
Collector Dissipation (T
C
=25
C)
70
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CES
Collector Cut-off Current
V
CE
= 1400V, V
BE
=0
1
mA
I
CBO
Collector Cut-off Current
V
CE
= 800V, I
E
= 0
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 4V, I
C
= 0
1
mA
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 8A
15
5.5
40
8.5
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 8A, I
B
= 2A
3
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 8A, I
B
= 2A
1.5
V
t
STG
Storage Time
V
CC
= 200V, I
C
= 7A
I
B1
= 1.4A, I
B2
= - 2.8A
R
L
= 28.6
4
s
t
F
Fall Time
0.3
s
KSC5803
High Voltage Color Display Horizontal
Deflection Output
(No Damper Diode)
High Breakdown Voltage : BV
CBO
=1500V
High Speed Switching : t
F
=0.1
s (Typ.)
Wide S.O.A
For C-Monitor(85KHz)
TO-3PF
1.Base 2.Collector 3.Emitter
1
2000 Fairchild Semiconductor International
KSC580
3
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage 1
Figure 5. Collector-Emitter Saturation Voltage 2
Figure 6. Base-Emitter On Voltage
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I
B
=2.0A
I
B
=1.8A
I
B
=1.6A
I
B
=1.4A
I
B
=1.2A
I
B
=1.0A
I
B
=800mA
I
B
=600mA
I
B
=400mA
I
B
=200mA
I
C
[A
],
CO
L
L
E
C
T
O
R
CURRE
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
1
10
100
V
CE
=5V
125
75
25
-25
h
FE
,
DC CU
RRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
1
0.9
0.8
0.7
0.6
2
0.5
0.4
I
C
=3I
B
125
75
25
-25
V
CE
(
s
a
t
)
[
mV
]
,
SAT
U
R
AT
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
10
1
10
2
10
3
10
4
I
C
=3I
B
125
75
25
-25
V
CE
(s
a
t
)[
mV
], S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
10
1
10
2
10
3
10
4
I
C
=5I
B
125
75
25
-25
V
CE
(
s
a
t
)
[
m
V
], SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10
12
V
CE
=5V
I
C
[A],
COL
L
ECT
O
R
CURREN
T
V
BE
[V], BASE EMITTER VOLTAGE
2000 Fairchild Semiconductor International
K
SC580
3
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Switching Time
Figure 8. Safe Operating Area
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Power Derating
0.1
1
10
0.1
1
10
RESISTIVE
Vcc=200V
Ic=7A
Ib1=1.4A
tf
tstg
tst
g
[
s],
ST
O
R
AG
E T
I
ME
t
f
[
s],
F
A
L
L
T
I
M
E
-I
B2
[A], BASE CURRENT
1
10
100
1000
0.01
0.1
1
10
100
SINGLE PULSE
Tc=25
100
s
10
s
1ms
DC
10ms
100ms
I
C
[A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
10
100
1000
10000
0.1
1
10
100
Ic=5Ib1=5Ib2
L=500
H
SINGLE PULSE
Ib2=-1AConst
(at Ic>5A)
I
C
[
A
]
,
CO
L
L
ECT
O
R CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
P
D
[W
]
,
PO
W
E
R
D
I
SSIPAT
IO
N
T
C
[
], CASE TEMPERATURE
15.50
0.20
3.60
0.20
26.50
0.20
4.50
0.20
10.00
0.20
16.50
0.20
10
16.50
0.20
22.00
0.20
23.00
0.20
1.50
0.20
14.50
0.20
2.00
0.20
2.00
0.20
2.00
0.20
0.85
0.03
2.00
0.20
5.50
0.20
3.00
0.20
(1.50)
3.30
0.20
2.00
0.20
4.00
0.20
2.50
0.20
14.80
0.20
3.30
0.20
2.00
0.20
5.50
0.20
0.75
+0.20
0.10
0.90
+0.20
0.10
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
TO-3PF
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC580
3
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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MICROWIRETM
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PowerTrench
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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